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IS61VPS51236价格

参考价格：￥111.3304

型号：IS61VPS51236A-200TQLI 品牌：ISSI 备注：这里有IS61VPS51236多少钱，2025年最近7天走势，今日出价，今日竞价，IS61VPS51236批发/采购报价，IS61VPS51236行情走势销售排行榜，IS61VPS51236报价。

型号	功能描述	生产厂家企业	LOGO
IS61VPS51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B2	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B2I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3LI	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-200TQLI	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B2	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B2I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3L	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236B	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B2	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B2	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B2I	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B2I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3I	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200B3I	封装/外壳：165-TBGA 包装：托盘描述：IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61VPS51236A-200B3I-TR	封装/外壳：165-TBGA 包装：卷带（TR）描述：IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61VPS51236A-200TQ	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200TQ	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200TQI	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200TQI	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-200TQLI	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B2	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B2	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B2I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B2I	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3I	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3I	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A-250B3L	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI

IS61VPS51236产品属性

类型
描述
型号
IS61VPS51236
功能描述
静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

IS61VPS51236供应商更多...

更新时间：2025-12-12 13:31:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	IS61VPS51236A-200TQ	ISSI	19+	QFP	8550		询价
深圳市博中泰实业有限公司	IS61VPS51236A-200B3LI	ISSI/芯成	24+	BGA165	60000		询价
深圳市华睿芯科技有限公司	IS61VPS51236A-250B3I	ISSI	24+	BGA	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市向鸿伟业电子有限公司	IS61VPS51236A-200TQLI		2406+	QFP-100	650	诚信经营!进口原装!量大价优!	询价
深圳市斌腾达科技有限公司	IS61VPS51236A-250B3I	ISSI, Integrated Silicon Solut	21+	BGA	1000	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市威雅利发展有限公司	IS61VPS51236A-250B3I	ISSI	1322+	BGA	91	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市毅创腾电子科技有限公司	IS61VPS51236A-200TQI	ISSI		QFP100	800	正品原装--自家现货-实单可谈	询价
深圳市天芯威科技有限公司	IS61VPS51236A-200TQLI	ISSI	24+	n/a	25836	新到现货,只做原装进口	询价
深圳市佳鑫美电子科技有限公司	IS61VPS51236A200TQ	ISSI	25+	QFP	4500	原装正品!公司现货!欢迎来电!	询价
深圳市能元时代电子有限公司	IS61VPS51236A-250B3I		23+	BGA	64936	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

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产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
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瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
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