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型号	功能描述	生产厂家企业	LOGO
IS61VPS51236B	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B	Internal self-timed write cycle 文件：1.91707 Mbytes Page：33 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236B	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-250TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61VPS51236B-200B3LI-TR	封装/外壳：165-TBGA 包装：散装描述：IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61VPS51236B-200TQLI	封装/外壳：100-LQFP 包装：卷带（TR）描述：IC SRAM 18MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61VPS51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61VPS51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61VPS51236A	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI

IS61VPS51236B供应商更多...

更新时间：2025-12-12 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	IS61VPS51236B-200B3LI	ISSI	24+	NA/	3270	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	IS61VPS51236B-250B3LI-TR	ISSI(美国芯成)	24+	TFBGA165(13x15)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市科恒伟业电子有限公司	IS61VPS51236B-200B3LI	ISSI	2450+	BGA	9850	只做原装正品现货或订货假一赔十!	询价
讯运(深圳/上海)电子有限公司	IS61VPS51236B-200TQLI-TR	ISSI(美国芯成)	2021+	LQFP-100(14x20)	499		询价
深圳市冠亿通科技有限公司	IS61VPS51236B-200B3LI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市河锋鑫科技有限公司	IS61VPS51236B200B3LITR	ISSI Integrated Silicon Soluti	22+	165TFBGA (13x15)	9000	原厂渠道,现货配单	询价
瀚佳科技(深圳)有限公司	IS61VPS51236B-200TQLI	ISSI, Integrated Silicon Solut	24+	100-LQFP(14x20)	56200	一级代理/放心采购	询价
艾睿（深圳）半导体有限公司	IS61VPS51236B-200B3LI	ISSI(美国芯成)	2447	TFBGA-165(13x15)	315000	144个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市安富世纪电子有限公司	IS61VPS51236B-250B3LI-TR	ISSI, Integrated Silicon Solu	23+	165-TFBGA13x15	7300	专注配单,只做原装进口现货	询价
深圳市宇创芯科技有限公司	IS61VPS51236B-200TQLI-TR	ISSI(美国芯成)	24+	LQFP-100(14x20)	16508	原装正品现货支持实单	询价

IS61VPS51236B芯片相关品牌

IS61VPS51236B规格书下载地址

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IS61VPS51236B数据表相关新闻

IS62WV51216BLL-55TL
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2022-7-1
IS62WV12816EBLL-45BLI
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IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
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原装正品热卖假一赔十
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
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瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30

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IS61VPS51236B供应商更多...

IS61VPS51236B芯片相关品牌

IS61VPS51236B规格书下载地址

IS61VPS51236B参数引脚图相关

IS61VPS51236B数据表相关新闻

IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引