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IS61LV6416-1价格
参考价格：￥12.8331
型号：IS61LV6416-10BLI 品牌：ISSI 备注：这里有IS61LV6416-1多少钱，2025年最近7天走势，今日出价，今日竞价，IS61LV6416-1批发/采购报价，IS61LV6416-1行情走势销售排行榜，IS61LV6416-1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI |   | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as | ISSI 矽成半导体 | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l | ICSI | | ||
封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
IS61LV6416-1产品属性
- 类型
描述
- 型号
IS61LV6416-1
- 制造商
ICSI
- 制造商全称
Integrated Circuit Solution Inc
- 功能描述
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
NA/ |
886 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
2016+ |
BGA |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ISSI |
24+ |
TSSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
INTEGRATEDS |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
ISSI |
24+ |
S0J |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ISSI? |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ISSI |
BGA |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ISSI |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
25+23+ |
TSOP |
37645 |
绝对原装正品全新进口深圳现货 |
|||
ICSI |
25+ |
TSOP44 |
1285 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IS61LV6416-1芯片相关品牌
IS61LV6416-1规格书下载地址
IS61LV6416-1参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS725
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS655A
- IS654A
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61VPS102436B-250TQLI
- IS61VPS102418A-250TQL
- IS61VF51236A-7.5TQLI
- IS61QDB24M18A-300M3L
- IS61NVP51236-200TQLI
- IS61NVP25636A-200TQLI
- IS61NLP6432A-200TQLI
- IS61NLP51236-200TQLI
- IS61NLP25636A-200TQLI
- IS61NLP25636A-200B3I
- IS61NLP25636A-200B2LI
- IS61NLP25618A-200TQLI
- IS61NLP102418-200TQLI
- IS61NLF12836A-7.5TQLI
- IS61LV6416-8TL-TR
- IS61LV6416-8TL
- IS61LV6416-10TLI
- IS61LV6416-10TL
- IS61LV6416-10KLI-TR
- IS61LV6416-10BLI
- IS61LV5128AL-10TLI
- IS61LV5128AL-10KLI
- IS61LV256AL-10TLI
- IS61LV256AL-10JLI-TR
- IS61LV256AL-10JLI
- IS61LV2568L-10TL
- IS61LV25616AL-10TL-TR
- IS61LV25616AL-10TLI-TR
- IS61LV25616AL-10TLI
- IS61LV25616AL-10TL
- IS61LV25616AL-10BLI
- IS61LV12824-10TQLI
- IS61LV12824-10BL
- IS61LV12816L-10TLI
- IS61LV12816L-10TL
- IS61LPS51236A-200TQLI
- IS61LPS51218A-200TQLI
- IS61LPS25636A-200TQLI
- IS61LPS25636A-200B3LI
- IS61LPS12836EC-200TQLI
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
- IS6015
- IS6010X
- IS6010
- IS6005X
- IS6005
IS61LV6416-1数据表相关新闻
IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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