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IS61LV3216L	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61LV3216	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216L-10K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-10T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI

IS61LV3216L产品属性

类型
描述
型号
IS61LV3216L
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
32K x 16 LOW VOLTAGE CMOS STATIC RAM

IS61LV3216L供应商更多...

更新时间：2025-11-22 11:18:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海鑫科润电子科技有限公司	IS61LV3216L-15TI	ISSI	99+	TSOP/44	56	原装现货海量库存欢迎咨询	询价
深圳市宇创芯科技有限公司	IS61LV3216L-15TI	ISSI	24+	TSOP	9600	原装现货,优势供应,支持实单!	询价
深圳市坤融电子科技有限公司	IS61LV3216L-20T	ISSI	2025+	TSOP	5000	原装进口价格优请找坤融电子!	询价
贸泽芯城（深圳）电子科技有限公司	IS61LV3216L-20TI	ISSI	23+	TSOP	4800	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市亿联芯电子科技有限公司	IS61LV3216L-15T	ISSI	2023+	TSOP44	8635	一级代理优势现货,全新正品直营店	询价
深圳市恒达亿科技有限公司	IS61LV3216L-12T	ISSI	25+	TSOP	3000	全新原装、诚信经营、公司现货销售	询价
艾睿（深圳）半导体有限公司	IS61LV3216L	ISSI	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市能元时代电子有限公司	IS61LV3216L-15TI	ISSI	23+	DIP	61394	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市安富世纪电子有限公司	IS61LV3216L-15TI	ISSI	23+	TSOP-44	8000	专注配单,只做原装进口现货	询价
深圳市威尔健半导体有限公司	IS61LV3216L-15TI	ISSI	23+	TSOP	50000	全新原装正品现货,支持订货	询价

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产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
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IS61LV3216L产品属性

IS61LV3216L供应商更多...

IS61LV3216L芯片相关品牌

IS61LV3216L规格书下载地址

IS61LV3216L参数引脚图相关

IS61LV3216L数据表相关新闻

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引