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型号	功能描述	生产厂家企业	LOGO
IS61LV3216	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61LV3216-10K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-10T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-12K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-12KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-12T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-12TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-15K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-15KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-15T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-15TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-20K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-20KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-20T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216-20TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption	ISSI 矽成半导体	ISSI
IS61LV3216L	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-10K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-10T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-12TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-15TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20K	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20KI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20T	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L-20TI	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio	ISSI 矽成半导体	ISSI
IS61LV3216L	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI

IS61LV3216产品属性

类型
描述
型号
IS61LV3216
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
32K x 16 LOW VOLTAGE CMOS STATIC RAM

IS61LV3216供应商更多...

更新时间：2025-11-22 9:38:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市诚利顺电子科技有限公司	IS61LV3216-10T	ISSI	22+	SSOP	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市创新迹电子有限公司	IS61LV3216L-12T	ISSI	2021+	TSOP	6800	原厂原装,欢迎咨询	询价
深圳市华睿芯科技有限公司	IS61LV3216L-12T	ISSI	24+	TSOP-44	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
贸泽芯城（深圳）电子科技有限公司	IS61LV3216	ISSI	23+	IS	98588	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛美科科技有限公司	IS61LV3216L-15TI	ISSI		TSOP44	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市星宇佳科技有限公司	IS61LV3216L-15TI	ISSI	2019	TSOP	9873	原装现货支持BOM配单服务	询价
深圳市中远芯科技有限公司	IS61LV3216-12K	ISSI	9737+	SOJ44	1499	原装现货	询价
深圳市壹芯创科技有限公司	IS61LV3216	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市赛尔通科技有限公司	IS61LV3216	ALTERA	23+		65480		询价
深圳市英卓尔科技有限公司	IS61LV3216L-15TI	ISSI	20+	TSOP44	2960	诚信交易大量库存现货	询价

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IS61LV3216产品属性

IS61LV3216供应商更多...

IS61LV3216芯片相关品牌

IS61LV3216规格书下载地址

IS61LV3216参数引脚图相关

IS61LV3216数据表相关新闻

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引