128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

ASYNCHRONOUS STATIC RAM, High Speed A.SRAM

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 3MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 3MBIT PARALLEL 119PBGA 集成电路（IC） 存储器