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IS61LV12824-10BL价格
参考价格：￥53.7006
型号：IS61LV12824-10BL 品牌：ISSI 备注：这里有IS61LV12824-10BL多少钱，2026年最近7天走势，今日出价，今日竞价，IS61LV12824-10BL批发/采购报价，IS61LV12824-10BL行情走势销售排行榜，IS61LV12824-10BL报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61LV12824-10BL | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons | ISSI 矽成半导体 |   | |
IS61LV12824-10BL | 封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 3MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 3MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons | ISSI 矽成半导体 | | ||
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons | ISSI 矽成半导体 | | ||
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons | ISSI 矽成半导体 | | ||
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons | ISSI 矽成半导体 | |
IS61LV12824-10BL产品属性
- 类型
描述
- 型号
IS61LV12824-10BL
- 功能描述
静态随机存取存储器 3Mb 128Kx24 10ns Async 静态随机存取存储器 3.3v
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
119-BGA(14x22) |
73390 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI, Integrated Silicon Solu |
23+ |
119-PBGA14x22 |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI/芯成 |
23+ |
BGA119 |
1587 |
原装现货 |
|||
ISSI |
24+ |
SMD |
15600 |
静态随机存取存储器3Mb128Kx2410nsAsync静态随机存取 |
|||
ISSI |
1408+ |
PBGA119 |
7 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
ISSI/芯成 |
24+ |
BGA119 |
60000 |
||||
ISSI, Integrated Silicon Solut |
21+ |
96-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ISSI |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
IS61LV12824-10BL芯片相关品牌
IS61LV12824-10BL规格书下载地址
IS61LV12824-10BL参数引脚图相关
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IS61LV12824-10BL数据表相关新闻
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2020-7-13IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
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