型号 功能描述 生产厂家 企业 LOGO 操作
IS61LV12816L-10BLI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

IS61LV12816L-10BLI

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

IS61LV12816L-10BLI

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

IS61LV12816L-10BLI产品属性

  • 类型

    描述

  • 型号

    IS61LV12816L-10BLI

  • 功能描述

    静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-5 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
14870
优势代理渠道,原装正品,可全系列订货开增值税票
ISSI
22+
BGA
8000
原装正品支持实单
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
25+
mBGA-48
16000
原装优势绝对有货
ISSI
23+
标准
5000
原装正品,假一罚十
ISSI
16+
BGA
1232
进口原装现货/价格优势!
ISSI
1728+
?
8450
只做原装进口,假一罚十
ISSI Integrated Silicon Soluti
23+
48miniBGA (6x8)
9000
原装正品,支持实单
ISSI
24+
con
10
现货常备产品原装可到京北通宇商城查价格
ISSI(美国芯成)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

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