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IS61LV12816价格

参考价格：￥22.7754

型号：IS61LV12816L-10TL 品牌：ISSI 备注：这里有IS61LV12816多少钱，2025年最近7天走势，今日出价，今日竞价，IS61LV12816批发/采购报价，IS61LV12816行情走势销售排行榜，IS61LV12816报价。

型号	功能描述	生产厂家企业	LOGO
IS61LV12816	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61LV12816-10B	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-10B	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10B	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10BI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-10K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-10K	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10K	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10KI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10KI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-10LQ	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10LQ	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10T	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-10T	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10TI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-10TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-10TI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12B	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12B	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-12B	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12BI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-12BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12K	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-12K	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-12KI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12LQ	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12LQ	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12T	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-12T	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12TI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-12TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-12TI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15B	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15B	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-15B	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15BI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-15BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15K	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-15KI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816-15LQ	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15LQ	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816-15LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI

IS61LV12816产品属性

类型
描述
型号
IS61LV12816
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV12816供应商更多...

更新时间：2025-11-23 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS61LV12816L-10TLI-TR	ISSI(美国芯成)	24+	TSOPII44	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	IS61LV12816LL-12T	ISSI	24+	NA/	3260	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	IS61LV12816L-10TL	ISSI	2016+	TSOP44	1980	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市纳艾斯科技有限公司	IS61LV12816L-10TL	ISSI	24+	TSOP44	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市富利微电子科技有限公司	IS61LV12816L-10T	ISSI	24+	TSOP44	30000	原装正品公司现货,假一赔十!	询价
深圳市科芯源微电子有限公司	IS61LV12816L-10TLI内存芯片	ISSI	25+	TSOP44	54658	百分百原装现货实单必成	询价
深圳市金芯世纪电子有限公司	IS61LV12816-121T	CSI	22+	SOP	100000	代理渠道/只做原装/可含税	询价
深圳市华睿芯科技有限公司	IS61LV12816ALL-55T	ISSI	24+	TSOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市冠亿通科技有限公司	IS61LV12816L-10TL	ISSI	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市星宇佳科技有限公司	IS61LV12816L-10TL	ISSI	0723+	TSOP-44	90		询价

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4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

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