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型号	功能描述	生产厂家企业	LOGO
IS61LPS51236B	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B	Internal self-timed write cycle 文件：1.91707 Mbytes Page：33 Pages	ISSI 矽成半导体	ISSI
IS61LPS51236B	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LPS51236B_V01	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-250TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPS51236B-200B3LI-TR	封装/外壳：165-TBGA 包装：卷带（TR）描述：IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPS51236B-200TQLI	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 18MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPS51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPS51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 文件：220.58 Kbytes Page：34 Pages	ISSI 矽成半导体	ISSI
IS61LPS51236A	256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM 文件：375.56 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI

IS61LPS51236B供应商更多...

更新时间：2025-11-23 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS61LPS51236B-200TQLI-TR	ISSI(美国芯成)	24+	LQFP100(14x20)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市芯睿晨科技有限公司	IS61LPS51236B-200TQLI	ISSI, Integrated Silicon Solut	23+	100-LQFP	3500	只做原装,假一赔十	询价
天津市博通航睿技术有限公司	IS61LPS51236B-200TQLI	ISSI			2		询价
艾睿（深圳）半导体有限公司	IS61LPS51236B-200B3LI	ISSI(美国芯成)	2447	TFBGA-165(13x15)	315000	144个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市天芯威科技有限公司	IS61LPS51236B-200TQLI	ISSI	24+	n/a	25836	新到现货,只做原装进口	询价
深圳市威雅利发展有限公司	IS61LPS51236B-200TQLI	ISSI	21+	TQFP100	200	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市坤融电子科技有限公司	IS61LPS51236B-200TQLI	ISSI	2025+	LQFP	5000	原装进口价格优请找坤融电子!	询价
深圳市斌腾达科技有限公司	IS61LPS51236B-200B3LI-TR	ISSI, Integrated Silicon Solut	21+	64-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市安富世纪电子有限公司	IS61LPS51236B-200TQLI	ISSI	23+	TQFP100	50000	全新原装正品现货,支持订货	询价
深圳市芯为科技有限公司	IS61LPS51236B-200B3LI-TR	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价

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IS61LPS51236B规格书下载地址

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IS61LPS51236B数据表相关新闻

IS61C1024AL-12KLI
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2022-9-21
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IS61LPS51236B供应商更多...

IS61LPS51236B芯片相关品牌

IS61LPS51236B规格书下载地址

IS61LPS51236B参数引脚图相关

IS61LPS51236B数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引