IS61LPS51236A价格

参考价格:¥160.0959

型号:IS61LPS51236A-200TQLI 品牌:ISSI 备注:这里有IS61LPS51236A多少钱,2025年最近7天走势,今日出价,今日竞价,IS61LPS51236A批发/采购报价,IS61LPS51236A行情走势销售排行榜,IS61LPS51236A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61LPS51236A

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

IS61LPS51236A

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

IS61LPS51236A

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路(IC) 存储器

ETC

知名厂家

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

封装/外壳:165-TBGA 包装:卷带(TR) 描述:IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路(IC) 存储器

ETC

知名厂家

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs

ISSI

矽成半导体

Internal self-timed write cycle

文件:1.91707 Mbytes Page:33 Pages

ISSI

矽成半导体

IS61LPS51236A产品属性

  • 类型

    描述

  • 型号

    IS61LPS51236A

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
3773
原装现货,当天可交货,原型号开票
ISSI
2016+
TQFP
9000
只做原装,假一罚十,公司可开17%增值税发票!
XILINX
24+
TQFP100
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ISSI
2450+
QFP
9850
只做原装正品现货或订货假一赔十!
ISSI
1902+
100TQFP
532
原装现货支持BOM配单服务
ISSI
2023+
100TQFP
6895
原厂全新正品旗舰店优势现货
ISSI
23+
QFP
5000
原装正品,假一罚十
ISSI
17+
QFP
60000
保证原装进口现货可开17%增值税发票
ISSI
三年内
1983
只做原装正品
ISSI
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

IS61LPS51236A数据表相关新闻