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型号	功能描述	生产厂家企业	LOGO
IS61LPD25636A	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-200TQ	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200TQ2I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200TQI	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200TQLI	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B2	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B2	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B2I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B2I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B3	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B3	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B3I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-250B3I	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LPD25636A-250TQ	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-250TQI	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5	ISSI 矽成半导体	ISSI
IS61LPD25636A-200TQLI	封装/外壳：100-LQFP 包装：散装描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPD25636A-200TQLI-TR	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPD25636T/D	256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61SPD25632, IS61SPD25636, S61SPD51218, IS61LPD25632, IS61LPD25636, and IS61LPD51218 are high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. The IS61SPD25632	ISSI 矽成半导体	ISSI
IS61LPD25636TSLASHD	256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61SPD25632, IS61SPD25636, S61SPD51218, IS61LPD25632, IS61LPD25636, and IS61LPD51218 are high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. The IS61SPD25632	ISSI 矽成半导体	ISSI

IS61LPD25636A产品属性

类型
描述
型号
IS61LPD25636A
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

IS61LPD25636A供应商更多...

更新时间：2026-1-29 17:12:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富芯乐电子科技有限公司	IS61LPD25636A	ISSI	24+	BGA	4500	只做原装正品现货欢迎来电查询15919825718	询价
深圳市毅创腾电子科技有限公司	IS61LPD25636A-200TQLI	ISSI	23+	100-TQFP(14x20)	71890	专业分销产品!原装正品!价格优势!	询价
深圳市壹芯创科技有限公司	IS61LPD25636D-133B	ISSI	22+	BGA	5000	全新原装现货!自家库存!	询价
深圳市宏捷佳电子科技有限公司	IS61LPD25636A-200TQLI	ISSI Integrated Silicon Solut	25+	100-LQFP	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市佳鑫美电子科技有限公司	IS61LPD25636D166Tq	ISSI	25+	QFP	4500	原装正品!公司现货!欢迎来电!	询价
深圳市河锋鑫科技有限公司	IS61LPD25636A200TQLITR	ISSI Integrated Silicon Soluti	22+	100TQFP (14x20)	9000	原厂渠道,现货配单	询价
深圳市安富世纪电子有限公司	IS61LPD25636A-200TQLI-TR	ISSI, Integrated Silicon Solu	23+	100-TQFP14x20	7300	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	IS61LPD25636A-200TQLI	ISSI(美国芯成)	2447	TQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
天津市博通航睿技术有限公司	IS61LPD25636T-166TQ	ISSI	23+	QFP	7000		询价
瀚佳科技(深圳)有限公司	IS61LPD25636A-200TQLI	ISSI, Integrated Silicon Solut	24+	100-TQFP(14x20)	56200	一级代理/放心采购	询价

IS61LPD25636A芯片相关品牌

IS61LPD25636A规格书下载地址

IS61LPD25636A参数引脚图相关

IS61LPD25636A数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LPD25636A产品属性

IS61LPD25636A供应商更多...

IS61LPD25636A芯片相关品牌

IS61LPD25636A规格书下载地址

IS61LPD25636A参数引脚图相关

IS61LPD25636A数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引