型号 功能描述 生产厂家 企业 LOGO 操作
IS61LPD25636A-200TQLI-TR

封装/外壳:100-LQFP 包装:托盘 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5

ISSI

矽成半导体

256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5

ISSI

矽成半导体

256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

IS61LPD25636A-200TQLI-TR产品属性

  • 类型

    描述

  • 型号

    IS61LPD25636A-200TQLI-TR

  • 功能描述

    静态随机存取存储器 8M(256Kx36) 200MHz Sync 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-11-18 20:00:00
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25+
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现货供应,当天可交货!免费送样,原厂技术支持!!!
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原装正品!公司现货!欢迎来电!
ISSI
22+
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全新原装现货!自家库存!
ISSI Integrated Silicon Soluti
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原厂渠道,现货配单
ISSI, Integrated Silicon Solut
24+
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56200
一级代理/放心采购

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