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型号	功能描述	生产厂家企业	LOGO
IS61LF51236B	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B2	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B2I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B2L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B2LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B3	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B3I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B3L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5B3LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5TQ	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5TQI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5TQL	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5TQLI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B2	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B2I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B2L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B2LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B3	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B3I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B3L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5B3LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5TQ	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5TQI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5TQL	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-7.5TQLI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF51236B-6.5TQLI-TR	封装/外壳：100-LQFP 包装：卷带（TR）描述：IC SRAM 18MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LF51236B-7.5B3LI	封装/外壳：165-TBGA 包装：散装描述：IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LF51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LF51236A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：276.75 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI

IS61LF51236B供应商更多...

更新时间：2025-11-23 11:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	IS61LF51236B-7.5TQLI	ISSI	23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
艾睿（深圳）半导体有限公司	IS61LF51236B-6.5TQLI	ISSI(美国芯成)	2447	LQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市冠亿通科技有限公司	IS61LF51236B-7.5B3LI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市芯为科技有限公司	IS61LF51236B-7.5B3I	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市河锋鑫科技有限公司	IS61LF51236B6.5TQLITR	ISSI Integrated Silicon Soluti	22+	100LQFP (14x20)	9000	原厂渠道,现货配单	询价
深圳市向鸿伟业电子有限公司	IS61LF51236B-7.5TQLI	ISSI	2405+	n/a	9845	十年芯路!诚信赢客户!合作创未来!	询价
瀚佳科技(深圳)有限公司	IS61LF51236B-6.5TQLI	ISSI, Integrated Silicon Solut	24+	100-LQFP(14x20)	56200	一级代理/放心采购	询价
深圳市星宇佳科技有限公司	IS61LF51236B-7.5TQLI	ISSI	19+	*	72		询价
深圳市天芯威科技有限公司	IS61LF51236B-7.5TQLI	ISSI	24+	n/a	25836	新到现货,只做原装进口	询价
深圳市卓越微芯电子有限公司	IS61LF51236B-7.5B2LI	ISSI	25+	BGA119	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价

IS61LF51236B芯片相关品牌

IS61LF51236B规格书下载地址

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IS61LF51236B数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
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2022-8-10
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LF51236B供应商更多...

IS61LF51236B芯片相关品牌

IS61LF51236B规格书下载地址

IS61LF51236B参数引脚图相关

IS61LF51236B数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引