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型号	功能描述	生产厂家企业	LOGO
IS61LF12836EC	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQ	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQLI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQLI-TR	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 4.5MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LF12836EC-7.5B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5TQ	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5TQLI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM 文件：2.45247 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5TQLI	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 4.5MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LF12836A	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 wor	ISSI 矽成半导体	ISSI

IS61LF12836EC产品属性

类型
描述
型号
IS61LF12836EC
功能描述
静态随机存取存储器 4M, 3.3V, 6.5ns 128Kx36 Sync 静态随机存取存储器
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

IS61LF12836EC供应商更多...

更新时间：2025-11-19 15:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IS61LF12836EC7.5TQLITR	ISSI Integrated Silicon Soluti	22+	100LQFP (14x20)	9000	原厂渠道,现货配单	询价
贸泽芯城（深圳）电子科技有限公司	IS61LF12836EC-7.5TQLI	ISSI	23+	TQFP100	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市高捷芯城科技有限公司	IS61LF12836EC-7.5TQLI	ISSI(美国芯成)	24+	LQFP100(14x20)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市安富世纪电子有限公司	IS61LF12836EC-7.5TQLI-TR	ISSI, Integrated Silicon Solu	23+	100-LQFP14x20	7300	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	IS61LF12836EC-6.5TQLI	ISSI(美国芯成)	2447	LQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市冠亿通科技有限公司	IS61LF12836EC-7.5TQLI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市威雅利发展有限公司	IS61LF12836EC-7.5TQLI	ISSI	21+	TQFP100	900	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
北京京北通宇电子元件有限公司	IS61LF12836EC-7.5TQLI	ISSI	24+	con	10000	查现货到京北通宇商城	询价
深圳市宏捷佳电子科技有限公司	IS61LF12836EC-7.5TQLI	ISSI Integrated Silicon Solut	25+	100-LQFP	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
讯运(深圳/上海)电子有限公司	IS61LF12836EC-7.5TQLI	ISSI(美国芯成)	2021+	LQFP-100(14x20)	499		询价

IS61LF12836EC芯片相关品牌

IS61LF12836EC规格书下载地址

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IS61LF12836EC数据表相关新闻

IS61C1024AL-12KLI
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2022-9-21
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2022-8-10
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LF12836EC产品属性

IS61LF12836EC供应商更多...

IS61LF12836EC芯片相关品牌

IS61LF12836EC规格书下载地址

IS61LF12836EC参数引脚图相关

IS61LF12836EC数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引