型号 功能描述 生产厂家 企业 LOGO 操作
IS61LF12836EC-7.5B3L

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an

ISSI

矽成半导体

IS61LF12836EC-7.5B3L

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

文件:2.45247 Mbytes Page:36 Pages

ISSI

矽成半导体

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an

ISSI

矽成半导体

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

文件:2.45247 Mbytes Page:36 Pages

ISSI

矽成半导体

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

文件:2.45247 Mbytes Page:36 Pages

ISSI

矽成半导体

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

文件:2.45247 Mbytes Page:36 Pages

ISSI

矽成半导体

更新时间:2025-11-19 23:00:00
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ISSI,
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ISSI(美国芯成)
2447
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315000
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