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位置：首页 > IC中文资料 > IS46TR16256A

IS46TR16256A价格

参考价格：￥86.1538

型号：IS46TR16256A-15HBLA1 品牌：ISSI 备注：这里有IS46TR16256A多少钱，2025年最近7天走势，今日出价，今日竞价，IS46TR16256A批发/采购报价，IS46TR16256A行情走势销售排行榜，IS46TR16256A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS46TR16256A

1.5V DDR3 SDRAM Automotive

ISSI

矽成半导体

IS46TR16256A-107MBLA1

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256A-107MBLA2

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256A-125KBLA1

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256A-125KBLA2

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256A-15HBLA1

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256A-15HBLA2

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256AL-107MBLA1

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256AL-107MBLA2

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256AL-125KBLA1

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256AL-125KBLA2

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256AL-15HBLA1

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256AL-15HBLA2

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

ISSI

矽成半导体

IS46TR16256A-125KBLA1-TR

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 4GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

ETC

知名厂家

IS46TR16256A-125KBLA2

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 4GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

ETC

知名厂家

IS46TR16256AL

1.35V DDR3L SDRAM Automotive

ISSI

矽成半导体

IS46TR16256A供应商更多...

更新时间：2025-11-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IS46TR16256AL-15HBLA1
ISSI(美国芯成)
24+
TWBGA96(9x13)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
IS46TR16256A-15HBLA2
ISSI
24+
NA/
4072
原装现货,当天可交货,原型号开票
询价
深圳诚思涵科技有限公司
IS46TR16256A-15HBLA1
ISSI
24+
BGA
8000
只做原装正品现货
询价
深圳市中赛美电子科技有限公司
IS46TR16256AL-125KBLA2
ISSI
21+
BGA
7500
只做原装所有货源可以追溯原厂
询价
深圳市金芯世纪电子有限公司
IS46TR16256A-15HBLA2
ISSI
22+
BGA96
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
IS46TR16256AL-125KBLA1
ISSI/芯成
25+
FBGA
57488
百分百原装现货 实单必成 欢迎询价
询价
深圳市明嘉莱科技有限公司
IS46TR16256A-125KBLA1
ISSI/芯成
24+
FBGA96
161706
明嘉莱只做原装正品现货
询价
深圳市威雅利发展有限公司
IS46TR16256AL-15HBLA1
ISSI
18+
FBGA
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市凌旭科技有限公司
IS46TR16256A-15HBLA2
ISSI
21+
BGA96
1000
十年信誉,只做原装,有挂就有现货!
询价
深圳市冠亿通科技有限公司
IS46TR16256AL-125KBLA2
ISSI
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价

IS46TR16256A芯片相关品牌

IS46TR16256A规格书下载地址

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