型号 功能描述 生产厂家 企业 LOGO 操作
IS46LR32320C

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

ISSI

矽成半导体

IS46LR32320C

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

ISSI

矽成半导体

8M x 32Bits x 4Banks Mobile DDR SDRAM

文件:2.29066 Mbytes Page:47 Pages

ISSI

矽成半导体

更新时间:2026-1-2 15:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
1650+
?
8450
只做原装进口,假一罚十
ISSI(美国芯成)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ISSI, Integrated Silicon Solu
23+
60-TFBGA8x13
7300
专注配单,只做原装进口现货
ISSI
21+
BGA90
1975
ISSI
25+
BGA90
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
2223+
BGA90
26800
只做原装正品假一赔十为客户做到零风险
ISSI
24+
con
10000
查现货到京北通宇商城
ISSI, Integrated Silicon Solut
21+
-
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
24+
NA
53043
ISSI
23+
BGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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