位置:IS46LR32320C > IS46LR32320C详情

IS46LR32320C中文资料

厂家型号

IS46LR32320C

文件大小

1226.48Kbytes

页面数量

47

功能描述

1Gb (x16, x32) Mobile DDR SDRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS46LR32320C数据手册规格书PDF详情

Features

• JEDEC standard 1.8V power supply.

• VDD = 1.8V, VDDQ = 1.8V

• Four internal banks for concurrent operation

• MRS cycle with address key programs

- CAS latency 2, 3 (clock)

- Burst length (2, 4, 8, 16)

- Burst type (sequential & interleave)

• Fully differential clock inputs (CK, /CK)

• All inputs except data & DM are sampled at the rising

edge of the system clock

• Data I/O transaction on both edges of data strobe

• Bidirectional data strobe per byte of data (DQS)

• DM for write masking only

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• 64ms refresh period (8K cycle)

• Auto & self refresh

• Concurrent Auto Precharge

• Maximum clock frequency up to 208MHZ

• Maximum data rate up to 416Mbps/pin

• Power Saving support

- PASR (Partial Array Self Refresh)

- Auto TCSR (Temperature Compensated Self Refresh)

- Deep Power Down Mode

- Programmable Driver Strength Control by Full Strength

or 1/2, 1/4, 1/8 or 3/4 of Full Strength

• Status Register Read (SRR)

• LVCMOS compatible inputs/outputs

• Operation Temperature:

- Commercial (TA= 0 ~ 70 °C )

- Industrial (TA= -40 ~ 85 °C )

- Automotive, A1 (TA= -40 ~ 85 °C )

- Automotive, A2 (TA= -40 ~ 105 °C )

OPTIONS

• Configuration:

- 64Mx16 (16M x16 x 4 banks)

- 32Mx32 (8M x32 x 4 banks)

• Packages:

- 60-Ball TFBGA (8x10 mm) for x16

- 90-Ball TFBGA (8x13 mm) for x32

更新时间:2025-12-4 14:43:00
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