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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS43LR32200C-6BLI-TR | 封装/外壳：90-TFBGA 包装：托盘 描述：IC DRAM 64MBIT PARALLEL 90TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC |   |
IS43LR32200C-6BLI-TR | 动态随机存取存储器 64M, 1.8V, M-DDR 2Mx32, 166Mhz, RoHS | ISSI 矽成半导体 | | |
512K x 32Bits x 4Banks Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, | ISSI 矽成半导体 | | ||
512K x 32Bits x 4Banks Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
NA/ |
4045 |
原装现货,当天可交货,原型号开票 |
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ISSI Integrated Silicon Soluti |
22+ |
90LFBGA (8x13) |
9000 |
原厂渠道,现货配单 |
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ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI |
23+ |
BGA |
6000 |
专业配单保证原装正品假一罚十 |
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ISSI |
21+ |
BGA |
1346 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
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ISSI |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
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ISSI |
2450+ |
BGA90 |
6540 |
只做原装正品现货!或订货假一赔十! |
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ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
24+ |
BGA90 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ISSI(美国芯成) |
24+ |
TFBGA90(8x13) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
IS43LR32200C-6BLI-TR芯片相关品牌
IS43LR32200C-6BLI-TR规格书下载地址
IS43LR32200C-6BLI-TR参数引脚图相关
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IS43LR32200C-6BLI-TR数据表相关新闻
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2019-5-9
DdatasheetPDF页码索引
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