8M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /

8M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /

8M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /

8M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /

8M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /

Mobile DDR SDRAM

8M x 16Bits x 4Banks Mobile DDR SDRAM

文件：2.26338 Mbytes Page：42 Pages

8M x 16Bits x 4Banks Mobile DDR SDRAM

文件：1.60099 Mbytes Page：45 Pages