EDO & Fast Page Mode DRAM

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件：160.46 Kbytes Page：17 Pages

封装/外壳：44-TSOP（0.400"，10.16mm 宽），40 引线 包装：卷带（TR） 描述：IC DRAM 4MBIT PARALLEL 40TSOP 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽），40 引线 包装：卷带（TR） 描述：IC DRAM 4MBIT PARALLEL 40TSOP 集成电路（IC） 存储器

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak