型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV16257

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

EDO & Fast Page Mode DRAM

ISSI

矽成半导体

EDO & Fast Page Mode DRAM

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽),40 引线 包装:卷带(TR) 描述:IC DRAM 4MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽),40 引线 包装:卷带(TR) 描述:IC DRAM 4MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

EDO & Fast Page Mode DRAM

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

ICSI

IS41LV16257产品属性

  • 类型

    描述

  • 型号

    IS41LV16257

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 16(4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2026-3-3 10:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI/矽成
1414
DRAM/256KX16FP/TSOP/-40°
1350
原装香港现货真实库存。低价
ISSI, Integrated Silicon Solut
24+
40-TSOP
56200
一级代理/放心采购
ISSI
23+
SOJ40
50000
全新原装正品现货,支持订货
ISSI
19+
SOJ
18578
ISSI
2023+
TSOP
50000
原装现货
ISSI
2026+
SOJ
996880
只做原装,欢迎来电资询
ISSI
17+
TSOP40
9888
只做原装,现货库存
ISSI Integrated Silicon Soluti
22+
40TSOP
9000
原厂渠道,现货配单
23+
TSOP
4720
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持

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