型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV16105B-50KL

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

IS41LV16105B-50KL

封装/外壳:42-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PARALLEL 42SOJ 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

封装/外壳:42-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PARALLEL 42SOJ 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

IS41LV16105B-50KL产品属性

  • 类型

    描述

  • 型号

    IS41LV16105B-50KL

  • 功能描述

    动态随机存取存储器 16M 1Mx16 50ns

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-10-5 9:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持
ISSI, Integrated Silicon Solut
24+
42-SOJ
56200
一级代理/放心采购
ISSI
21+
SOJ
19600
一站式BOM配单
ISSI
23+
SOJ
7000
ISSI Integrated Silicon Soluti
23+
42SOJ
9000
原装正品,支持实单
ISSI
22+
SOJ
8000
原装正品支持实单
ISSI
24+
NA/
97
优势代理渠道,原装正品,可全系列订货开增值税票
ISSI
25+
SOJ
996880
只做原装,欢迎来电资询
ISSI
23+
42-SOJ
1389
专业分销产品!原装正品!价格优势!
24+
SOP
7003

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