型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV16105B-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

矽成半导体

封装/外壳:42-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PARALLEL 42SOJ 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:42-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PARALLEL 42SOJ 集成电路(IC) 存储器

ETC

知名厂家

IS41LV16105B-50K产品属性

  • 类型

    描述

  • 型号

    IS41LV16105B-50K

  • 功能描述

    动态随机存取存储器 16M 1Mx16 50ns

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2026-2-5 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2016+
SOJ42
1980
只做原装,假一罚十,公司可开17%增值税发票!
ISSI
2026+
SOJ
996880
只做原装,欢迎来电资询
ISSI, Integrated Silicon Solut
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ISSI
22+
SOJ
8000
原装正品支持实单
ISSI
23+
SOJ
98900
原厂原装正品现货!!
ISSI
SOJ42
320
正品原装--自家现货-实单可谈
ISSI
2447
SOJ
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
专注配单,只做原装进口现货
ISSI
23+
SOJ
7000
ISSI
25+
SOJ42
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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