AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast s

丝印代码：IPAK；isc N-Channel MOSFET Transistor

文件：247.74 Kbytes Page：2 Pages

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast s

Advanced Process Technology

文件：340.72 Kbytes Page：11 Pages

丝印代码：AM2908；One Channel H-Bridge DrMOS

Features and Benefits Lowest RDS(ON) =45mΩ 60V Absolute Maximum Voltage 4.5A Maximum Continuous Current. Lowest RDS(ON) and Small Package 10~50V Operating Voltage Range Overcurrent Protection Thermal Shutdown Protection Undervoltage Lockout Fault Indicator Pin Low Standby Curre

800mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2908 series of adjustable and fixed voltage regulators are designed to provide 800mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

800mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2908 series of adjustable and fixed voltage regulators are designed to provide 800mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

800mA LOW DROPOUT VOLTAGE REGULATOR

文件：63.54 Kbytes Page：7 Pages

800mA LOW DROPOUT VOLTAGE REGULATOR

文件：63.54 Kbytes Page：7 Pages