Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

Power MOSFET

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

文件：463.68 Kbytes Page：11 Pages

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

Logic-Level Gate Drive

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

isc N-Channel MOSFET Transistor

文件：397.88 Kbytes Page：2 Pages

采用 I-Pak 封装的 55V 单 N 通道功率 MOSFET

isc N-Channel MOSFET Transistor

文件：246.59 Kbytes Page：2 Pages

Logic-Level Gate Drive

文件：939.62 Kbytes Page：10 Pages

N-Channel 60 V (D-S) MOSFET

文件：995.79 Kbytes Page：7 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

文件：472.42 Kbytes Page：13 Pages

AUTOMOTIVE MOSFET

PISTON SEALS

DESCRIPTION The BECA 024 profile is a double acting composite piston seal composed of a profiled rubber ring and a filled PTFE or POM back-up ring. It meets the standards MIL-G-5514F and AS4716. APPLICATIONS Actuators Brakes systems Flight controls Engine systems Landing gear

Low Power, 5 MBd Digital CMOS Optocoupler

Description ACPL-M21L (single channel SO-5 package), ACPL-021L (single channel SO-8 package) and ACPL-024L (dual channel SO-8 package) are optically-coupled logic gates. The detector IC has CMOS output stage and optical receiver input stage with built-in Schmitt trigger to provide logic-compatibl

PC board mounting and direct insert mounting available

文件：1.60394 Mbytes Page：3 Pages

Low Power, 5-MBd Digital CMOS Optocoupler

文件：721.15 Kbytes Page：16 Pages

Low Power, 5-MBd Digital CMOS Optocoupler

文件：721.15 Kbytes Page：16 Pages