Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.1 A FEATURES ● Logic-Level Gate Drive ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ● Lower RDS(ON) : 0

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

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ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

文件：69.78 Kbytes Page：4 Pages