isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 58A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) =8.9mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

采用 D-Pak 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

High Frequency Synchronous Buck Converters for Computer Processor Power

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isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode Power MOSFET

Features * 30V,50A Rosow 3.88mO@Ves = 10V (Typ) + Advanced Trench Technology «+ Provide Excellent Roson and Low Gate Charge | + Lead free product is acquired

Ultra-Low Gate Impedance

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HEXFET Power MOSFET

文件：367.35 Kbytes Page：11 Pages

HEXFET

Power MOSFET

文件：353.15 Kbytes Page：11 Pages

Ultra-Low Gate Impedance

文件：353.15 Kbytes Page：11 Pages

Compatible with Existing Surface Mount Techniques

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30V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Compatible with Existing Surface Mount Techniques

文件：237.75 Kbytes Page：10 Pages

High Frequency Synchronous Buck Converters for Computer Processor Power

文件：353.15 Kbytes Page：11 Pages

N-Channel 30-V (D-S) MOSFET

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HEXFET Power MOSFET

文件：367.35 Kbytes Page：11 Pages

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

Electronic, 4 C #22 Str TC, PE Ins, OS, PVC Jkt, CM

Product Description Electronic, 4 Conductor 22AWG (19x34) Tinned Copper, PE Insulation, Overall Beldfoil® Shield, PVC Outer Jacket, CM

T-1 Wire Terminal (standard)

T-1 Wire Terminal (standard) T-1 Sub-Midget Flange Base

Sub-Midget Flange Base, Wire Terminal

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14 Pin DIP 5 Tap TTL Compatible High Speed Active Delay Lines

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