Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 7.5 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.)

isc N-Channel MOSFET Transistor

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MOSFET N-CH 200V 7.5A DPAK

MOSFET N-CH 200V 7.5A DPAK

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

Modular Radio Telemetry System

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1/4 FLAT PLUG PHONE PLUGS

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5x20 mm MINIATURE FUSES

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MINIATURE FUSES - 5x20 mm

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