Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

100V N-Channel MOSFET

VDS(V) = 100V ID = 10A (VGS = 10V) RDS(ON)

Advanced Process Technology

Surface Mount (IRLR120N)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Advanced Process Technology

文件：275.97 Kbytes Page：11 Pages

N-Channel 100 V (D-S) MOSFET

文件：979.57 Kbytes Page：7 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

文件：106.68 Kbytes Page：1 Pages

Precision Wirewound Resistors

文件：318.25 Kbytes Page：2 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages