Gigabit Ethernet Switch Evaluation Board

文件：2.68409 Mbytes Page：36 Pages

Ultra Low On-Resistance

文件：123.31 Kbytes Page：8 Pages

HEXFETPower MOSFET

文件：278.64 Kbytes Page：2 Pages

P-Channel 20-V (D-S) MOSFET

文件：1.0825 Mbytes Page：9 Pages

场效应管

P-Channel Mosfet

Application « Load/Power Switching «Interfacing Switching * Logic Level Shift

HEXFET Power MOSFET

文件：81.91 Kbytes Page：8 Pages

采用 Micro 3 封装的 -20V 单 P 通道 HEXFET 功率 MOSFET

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transisotr The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design,

Programmable Unijunction Transistor (PUT)

Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (P

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages