iMOTION™ Modular Application Design Kit

Eval-M1-CM610N3 is an evaluation board formotor drive applications based on a 3-phase IPM. Combined in a kit with one of the available MADK control board options, it demonstrates Infineon's IPM technology formotor drives. The kit demonstrates Infineon’s IPM technology formotor drives. Main feat

丝印代码：1G**；HEXFET Power MOSFET

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provi

丝印代码：1G；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET

N-Channel 20-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converte

丝印代码：1G；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

采用 Micro 3 封装的 20V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• SOT-23 封装;

丝印代码：1G**；N-Channel MOSFET

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HEXFET Power MOSFET

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designe

HEXFET

Power MOSFET

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provi

HEXFET Power MOSFET

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N-Channel 20 V (D-S) MOSFET

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Ultra Low On-Resistance

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Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint

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Ultra Low On-Resistance

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Compatible with Existing Surface Mount Techniques

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Compatible with Existing Surface Mount Techniques

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MOSFET N-CH 20V 4.2A SOT-23

HEXFETPower MOSFET

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N-Channel 20 V (D-S) MOSFET

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采用 Micro 3 封装的 20V 单 N 沟道功率 MOSFET

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

128Kbit Analog Cell Storage Flash Memory Revision 8.0 Apr. 01, 1999

GENERAL DESCRIPTION ML2502 is a record/playback LSI that stores analog signal directly into on-chip Flash memory (128Kbit Cell) without digital conversion utilizing new Analog Storage technology. Such unique features as low voltage operability (2.7 ~ 3.3V), no backup requirement and no external M

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

DESCRIPTION The PS2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2502-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2502L-1, -2, -4 are lead bending type

PLLatinum??Frequency Synthesizer System with Integrated VCO

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