Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 200V ♦Lower RDS(ON):1.185Ω(Typ.)

Advanced Power MOSFET

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 200V ♦Lower RDS(ON):1.185Ω(Typ.)

isc N-Channel MOSFET Transistor

文件：280.18 Kbytes Page：2 Pages

Compact, Portable IP67 Military Fast Ethernet Switch

PRODUCT DESCRIPTION Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of traffic is low, unmanaged, Fast Ethernet switche

Tape5 tape measures

Range Description A range of two sizes of Professional specification tape measures, offered with a variety of Merchandising options. Features · Autobrake system – automatically stops the tape from recoiling when extended, offering fast and convenient measuring · Magnetic hook tip – The mag

Innovative Pocket-Sized Measurement Technology

文件：238.32 Kbytes Page：10 Pages

횠6.35mm mounting Black anodised aluminium housing

文件：411.03 Kbytes Page：4 Pages

Low Profile

文件：146.02 Kbytes Page：2 Pages