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IRL530价格

参考价格:¥10.4054

型号:IRL530 品牌:Vishay 备注:这里有IRL530多少钱,2026年最近7天走势,今日出价,今日竞价,IRL530批发/采购报价,IRL530行情走势销售排行榜,IRL530报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL530

Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ● Lower RDS(ON) : 0.101Ω (Typ.)

FAIRCHILD

仙童半导体

IRL530

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAYVishay Siliconix

威世威世科技公司

IRL530

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Logic-level gate drive;

VISHAYVishay Siliconix

威世威世科技公司

IRL530

HEXFET Power MOSFET

INFINEON

英飞凌

IRL530

Advanced Power MOSFET

ONSEMI

安森美半导体

IRL530

Power MOSFET

文件:1.147 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRL530

HEXFET Power MOSFET

文件:193.79 Kbytes Page:8 Pages

IRF

IRL530

Repetitive Avalanche Rated

文件:1.14788 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRL530

Power MOSFET

文件:1.1486 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ● Lower RDS(ON) : 0.101Ω (Typ.)

FAIRCHILD

仙童半导体

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.1486 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel MOSFET Transistor

文件:338.12 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件:193.79 Kbytes Page:8 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:300.2 Kbytes Page:2 Pages

ISC

无锡固电

Adavanced Process Technology

文件:466.05 Kbytes Page:11 Pages

IRF

HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10廓 , ID=17A )

文件:465.09 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:587.26 Kbytes Page:9 Pages

IRF

Adavanced Process Technology

文件:466.05 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:587.26 Kbytes Page:9 Pages

IRF

丝印代码:D2PAK;Isc N-Channel MOSFET Transistor

文件:189.18 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件:281.15 Kbytes Page:10 Pages

IRF

l Advanced Process Technology

文件:290.4 Kbytes Page:11 Pages

IRF

HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10廓 , ID=17A )

文件:465.09 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:466.05 Kbytes Page:11 Pages

IRF

Adavanced Process Technology

文件:466.05 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:466.05 Kbytes Page:11 Pages

IRF

Power MOSFET

文件:1.147 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

文件:250.43 Kbytes Page:8 Pages

IRF

Power MOSFET

文件:281.14 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:281.14 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MOTOROLA

摩托罗拉

HIGH CURRENT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 5.0 Amperes)

VOLTAGE 20 to 60 Volt CURRENT 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

PANJIT

強茂

IRL530产品属性

  • 类型

    描述

  • OPN:

    IRL530NPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    100 V

  • RDS (on) @10V max:

    100 mΩ

  • RDS (on) @4.5V max:

    150 mΩ

  • ID @25°C max:

    17 A

  • QG typ @4.5V:

    22.7 nC

  • Polarity:

    N

  • VGS(th) min:

    1 V

  • VGS(th) max:

    2 V

  • VGS(th):

    1.5 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
25+
TO-263-2
11580
原装正品现货,原厂订货,可支持含税原型号开票。
HIT
23+
NA
6500
全新原装假一赔十
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
IR
21+
TO-220铁头
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+/25+
15
原装正品现货库存价优
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
INFINEON/英飞凌
25+
TO-220
15000
原装现货假一赔十
IR
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
SEC
25+
NA
880000
明嘉莱只做原装正品现货
Infineon(英飞凌)
25+
TO-263-2
11580
原装正品现货,原厂订货,可支持含税原型号开票。

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