型号 功能描述 生产厂家&企业 LOGO 操作
IRL3714L

Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Co

IRF

SMPS MOSFET HEXFET짰Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

IRF

HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain or Internal Pullup Output with Overcurrent Limit  Cho

DIODES

美台半导体

HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain or Internal Pullup Output with Overcurrent Limit  Cho

DIODES

美台半导体

HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain or Internal Pullup Output with Overcurrent Limit  Cho

DIODES

美台半导体

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain Output with Overcurrent Limit  Chopper-Stabilized Desi

DIODES

美台半导体

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain Output with Overcurrent Limit  Chopper-Stabilized Desi

DIODES

美台半导体

IRL3714L产品属性

  • 类型

    描述

  • 型号

    IRL3714L

  • 功能描述

    MOSFET N-CH 20V 36A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
6450
原装现货,当天可交货,原型号开票
IR
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
11+
TO-262
3200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
21+
TO-262
10000
原装现货假一罚十
IR
2016+
TO-262
6528
房间原装进口现货假一赔十
IR
21+
TO-220
30000
百域芯优势 实单必成 可开13点增值税
IR
24+
TO-262
8866
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
IR
17+
TO-220
6200
100%原装正品现货
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十

IRL3714L数据表相关新闻