型号 功能描述 生产厂家 企业 LOGO 操作
IRL3502

HEXFET Power MOSFET

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. Advanced Process

IRF

IRL3502

HEXFET Power MOSFET

文件:172.7 Kbytes Page:7 Pages

IRF

IRL3502

HEXFET Power MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

文件:172.7 Kbytes Page:7 Pages

IRF

MOSFET N-CH 20V 110A TO-262

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

文件:172.7 Kbytes Page:7 Pages

IRF

HEXFET Power MOSFET

文件:130.62 Kbytes Page:8 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

文件:243.84 Kbytes Page:8 Pages

IRF

3500 MHz Low Power UltraCMOS??Divide-by-4 Prescaler

Product Description The PE3502 is a high performance monolithic UltraCMOS™ prescaler with a fixed divide ratio of 4. Its operating frequency range is 1500 MHz to 3500 MHz. The PE3502 operates on a nominal 3 V supply and draws only 12 mA. It is packaged in a small 8-lead MSOP and is ideal for micr

Peregrine

200 V - 1,000 V Three Phase Bridge 40.0 A - 60.0 A Forward Current 70 ns - 3000 ns Recovery Time

40.0 A - 60.0 A Forward Current 70 ns - 3000 ns Recovery Time

VMI

Low Thermal EMF Reed Relays

LOW THERMAL EMF REED RELAYS The 3500 Series is ideally suited to the needs of Instrumentation, Data Acquisition and Process Control. The specification tables allow you to select the appropriate relay for your particular application. Recommended for use in high accuracy DVM’s, Multiplexers and Dig

RHOPOINT

Rhopoint Instruments

PLUG ASSEMBLY 3502A

文件:89.86 Kbytes Page:1 Pages

SWITCH

Switch Publishing Co.,Ltd.

PLUG ASSEMBLY 3502A

文件:89.86 Kbytes Page:1 Pages

SWITCH

Switch Publishing Co.,Ltd.

IRL3502产品属性

  • 类型

    描述

  • 型号

    IRL3502

  • 功能描述

    MOSFET N-CH 20V 110A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
129
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO 263
161293
明嘉莱只做原装正品现货
IR
08+
TO220
129
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR/VISHAY
23+
TO-TO-220
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
24+
TO-263
501466
免费送样原盒原包现货一手渠道联系
IR
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
23+
TO-220
35890
IR
24+
500
只做原厂渠道 可追溯货源
IR
24+
TO-220AB
8866
IR
22+
TO-263
9450
原装正品,实单请联系

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