Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

N-Channel MOSFET Transistor

文件：338.31 Kbytes Page：2 Pages

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

HEXFET Power MOSFET

ADVANCED PROCESS TECHNOLOGY

文件：228.73 Kbytes Page：9 Pages

HEXFET Power MOSFET

文件：219.74 Kbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：228.73 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：262.88 Kbytes Page：2 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

ADVANCED PROCESS TECHNOLOGY

文件：297.75 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：297.75 Kbytes Page：11 Pages

Direct-acting 2/2 or 3/2 way Rocker-Solenoid Valve with separating diaphragm

Bürkert’s unique miniature rocker solenoid valve is the pioneer of isolated mini valves suitable for laboratory, medical and analysis technology, that still set the standard! It is a highly reliable minimum volume valve that has low dead volume and is easy to purge. Boasting an inert isolating

2/2 or 3/2 way Pneumatic-Rocker-Solenoid Valve

The direct-acting rocker solenoid valve type 6106 is designed for use on neutral gaseous mediums. The heat input in the medium is minimal, because the housing is separated from the coil by a stainless steel plate. The valves can be mounted directly or also single or manifold mounted. They are u

2/2 or 3/2 way Rocker-Solenoid Valve with separating diaphragm

The direct-acting rocker solenoid valve, Type 6126, is suitable for general applications in which compressed air, gases or slightly contaminated liquids are to be switched. The medium is in contact exclusively with the housing material and the FKM seals. The heat input in the medium is minimal,

Surface Mount Package

文件：28.28 Kbytes Page：2 Pages

CAPTIVE PANEL SCREWS

文件：395.93 Kbytes Page：1 Pages