型号 功能描述 生产厂家&企业 LOGO 操作

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 描述:SCR DBL HISCR 600V 95A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 描述:SCR DBL HISCR 800V 95A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

IRKL91产品属性

  • 类型

    描述

  • 型号

    IRKL91

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

更新时间:2025-8-8 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
MODULE
16425
##公司主营品牌长期供应100%原装现货可含税提供技术
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
IR
2016+
module
6528
房间原装进口现货假一赔十
IR
23+
MODULE
7300
专注配单,只做原装进口现货
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
IR
23+
.
8000
只做原装现货
IR
23+
.
7000
IR
22+
.
6000
终端可免费供样,支持BOM配单
IR
2015
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
IR
2023+环保现货
模块
50
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