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THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

SCR DBL HISCR 600V 95A ADD-A-PAK

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 描述:SCR DBL HISCR 600V 95A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 描述:SCR DBL HISCR 800V 95A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

SCR DBL HISCR 800V 95A ADD-A-PAK

VISHAYVishay Siliconix

威世威世科技公司

SCR DBL HISCR 1000V 95A ADDAPAK

VISHAYVishay Siliconix

威世威世科技公司

IRKL91产品属性

  • 类型

    描述

  • SCR 数,二极管:

    1 SCR,1 个二极管

  • 电压 - 断态:

    400V

  • 电流 - 通态(It(AV))(最大值):

    95A

  • 电流 - 通态(It(RMS))(最大值):

    210A

  • 电压 - 栅极触发(Vgt)(最大值):

    2.5V

  • 电流 - 栅极触发(Igt)(最大值):

    150mA

  • 电流 - 不重复浪涌 50,60Hz(Itsm):

    1785A,1870A

  • 电流 - 保持(Ih)(最大值):

    250mA

  • 工作温度:

    -40°C ~ 125°C (TJ)

  • 安装类型:

    底座安装

  • 封装/外壳:

    ADD-A-PAK(3 + 2)

更新时间:2026-8-2 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
7000
QORVO
24+
SMD
5000
QORVO“芯达集团”专营品牌原装正品假一罚十
SYNERGY
2318+
原装正品
4285
十年专业专注 优势渠道商正品保证
ir
26+
N/A
6980
原装现货,可开13%税票
IR
22+
ADD-A-PAK(3 + 2)
6000
终端可免费供样,支持BOM配单
NGK特殊陶业NTK
23+
228694
原厂授权一级代理,专业海外优势订货,价格优势、品种
25+
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ir
25+
500000
行业低价,代理渠道
ir
2023+
原厂封装
50000
原装现货
IR
23+
8000
只做原装现货

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