| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF |   | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla | IRF | | ||
SCR DBL HISCR 600V 95A ADD-A-PAK | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：ADD-A-PAK（3 + 2） 包装：散装 描述：SCR DBL HISCR 600V 95A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块 | ETC 知名厂家 | ETC | | |
封装/外壳：ADD-A-PAK（3 + 2） 包装：散装 描述：SCR DBL HISCR 800V 95A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块 | ETC 知名厂家 | ETC | | |
SCR DBL HISCR 800V 95A ADD-A-PAK | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SCR DBL HISCR 1000V 95A ADDAPAK | VISHAYVishay Siliconix 威世威世科技公司 | |
IRKL91产品属性
- 类型
描述
- SCR 数，二极管：
1 SCR，1 个二极管
- 电压 - 断态：
400V
- 电流 - 通态（It（AV））（最大值）：
95A
- 电流 - 通态（It（RMS））（最大值）：
210A
- 电压 - 栅极触发（Vgt）（最大值）：
2.5V
- 电流 - 栅极触发（Igt）（最大值）：
150mA
- 电流 - 不重复浪涌 50，60Hz（Itsm）：
1785A，1870A
- 电流 - 保持（Ih）（最大值）：
250mA
- 工作温度：
-40°C ~ 125°C （TJ）
- 安装类型：
底座安装
- 封装/外壳：
ADD-A-PAK（3 + 2）
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
QORVO |
24+ |
SMD |
5000 |
QORVO“芯达集团”专营品牌原装正品假一罚十 |
|||
IR |
23+ |
140A200V |
350 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
23+ |
8000 |
只做原装现货 |
||||
IR |
23+ |
7000 |
|||||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
ir |
25+ |
500000 |
行业低价,代理渠道 |
||||
NGK特殊陶业NTK |
23+ |
228694 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
SYNERGY |
2318+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
IRKL91规格书下载地址
IRKL91参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRKT92
- IRKT71
- IRKT70
- IRKT570
- IRKT55
- IRKT500
- IRKT41
- IRKT40
- IRKT330
- IRKT26
- IRKT250
- IRKT1O6
- IRKT162
- IRKT142
- IRKT136
- IRKT130
- IRKT106
- IRKT105
- IRKT.91
- IRKT.71
- IRKL91-06S90
- IRKL91-06AS90
- IRKL91-06A
- IRKL91-06
- IRKL91-04S90
- IRKL91-04AS90
- IRKL91-04A
- IRKL91/12A
- IRKL91/10P
- IRKL91/10A
- IRKL91/08P
- IRKL91/08AS90
- IRKL91/08A
- IRKL91/06S90P
- IRKL91/06P
- IRKL91/06AS90
- IRKL91/06A
- IRKL91/04P
- IRKL91/04AS90
- IRKL91/04A
- IRKL72-06S90
- IRKL72-06
- IRKL72-04S90
- IRKL72-04
- IRKL72/08P
- IRKL72/08A
- IRKL71-18S90
- IRKL71-18
- IRKL71-16S90
- IRKL71-16AS90
- IRKL71-16A
- IRKL71-16
- IRKL71-14S90
- IRKL71-14AS90
- IRKL71-14A
- IRKL71-12S90
- IRKL71-12AS90
- IRKL71-12A
- IRKL71-12
- IRKL71-10S90
- IRKL240
- IRKJ91
- IRKJ71
- IRKJ56
- IRKJ320
- IRKJ270
- IRKJ250
- IRKH92
- IRKH70
- IRKH570
- IRKH55
- IRKH500
- IRKH40
- IRKH26
- IRKH1O6
- IRKH162
- IRKH106
- IRKF180
- IRKF132
- IRKF102
IRKL91数据表相关新闻
IRL1404ZPBF 大功率 MOS 管 DC-DC 转换器、电机驱动、逆变器、电池保护、开关电源、电动工具、大功率负载开关
IRL1404ZPBF 是英飞凌 / IR 推出的 N 沟道增强型功率 MOSFET，采用逻辑电平驱动，适合低压大电流开关应用，为工业级标准器件。
2026-4-16IRGP4266D-EPBF
IRGP4266D-EPBF
2023-12-11IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF 厂家：IR 封装：TO-220 现货热卖 原厂原包装，只做原装，假一赔万 !!! 欢迎致电 上海意淼张小姐 18301798078 021-61316368 QQ:2719102545
2019-10-11IRL1004STRRPBF公司大量原装正品现货/长期供应
IRL1004STRRPBF公司大量原装正品现货/长期供应
2019-5-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
