型号 功能描述 生产厂家 企业 LOGO 操作

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 描述:SCR DBL HISCR 600V 75A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

SCR DBL HISCR 600V 75A ADD-A-PAK

VishayVishay Siliconix

威世威世科技公司

SCR DBL HISCR 800V 75A ADD-A-PAK

VishayVishay Siliconix

威世威世科技公司

封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 描述:SCR DBL HISCR 800V 75A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

SCR DBL HISCR 1000V 75A ADDAPAK

VishayVishay Siliconix

威世威世科技公司

IRKL71产品属性

  • 类型

    描述

  • 型号

    IRKL71

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

更新时间:2025-11-18 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
module
6000
全新原装正品现货 假一赔佰
IR
NEW
模块
3562
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
2015
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
IR
24+
SOT-1463&NBS
200
只做原装正品现货 欢迎来电查询15919825718
IR
23+
模块
240
全新原装正品,量大可订货!可开17%增值票!价格优势!
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
IR
6000
面议
19
 专营模块
IR
23+
MODULE
8000
只做原装现货
IR
23+
MODULE
7000
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单

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