Rad hard MOSFETs

\n优势:;

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

文件：136.56 Kbytes Page：8 Pages

Simple Drive Requirements

文件：168.87 Kbytes Page：8 Pages

Simple Drive Requirements

文件：168.87 Kbytes Page：8 Pages

Cold Cathode Fluorescent Lamps

Cold Cathode Fluorescent Lamps Cold Cathode Ultra Violet Lamps (254nm) Cold Cathode Ultra Violet Lamps (350nm)

23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

Programmable deflection controller

文件：281.48 Kbytes Page：36 Pages

Programmable deflection controller

文件：281.48 Kbytes Page：36 Pages