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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRGSL15B60K产品属性
- 类型
描述
- 型号
IRGSL15B60K
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
Infineon Technologies |
23+ |
TO2623 |
9000 |
原装正品，支持实单 |
|||
IR |
TO-262 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
TO-262 |
265209 |
假一罚十原包原标签常备现货! |
||||
VISHAY-威世 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
2020+ |
TO-262 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
23+ |
TO-262 |
8600 |
全新原装现货 |
|||
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
23+ |
TO-262 |
9896 |
||||
Infineon Technologies |
24+ |
TO-262-3,长引线,I?Pak,TO-26 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
IRGSL15B60K芯片相关品牌
IRGSL15B60K规格书下载地址
IRGSL15B60K参数引脚图相关
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IRGSL15B60K数据表相关新闻
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2023-12-11IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF厂家：IR封装：TO-220现货热卖原厂原包装，只做原装，假一赔万!!!欢迎致电上海意淼张小姐18301798078021-61316368QQ:2719102545
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2019-5-8
DdatasheetPDF页码索引
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