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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS15B60KDPBF | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor | IRF International Rectifier |  |   |
IRGS15B60KDPBF | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：830.08 Kbytes Page：16 Pages | IRF International Rectifier | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：830.08 Kbytes Page：16 Pages | IRF International Rectifier | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRF International Rectifier | | |
IRGS15B60KDPBF产品属性
- 类型
描述
- 型号
IRGS15B60KDPBF
- 功能描述
IGBT 晶体管 600V ULTRAFAST 10-30KHZ COPACK IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
422 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
19+ |
D2-Pak |
75165 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
IR |
24+ |
TO-263D2PAK |
9000 |
全新原装正品,IR全线可订 |
|||
IR |
17+ |
TO263 |
6200 |
100%原装正品现货 |
|||
IR |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
|||
IR |
23+ |
TO-263 |
7000 |
||||
VISHAY |
24+ |
TO-263 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
1923+ |
TO263 |
5000 |
正品原装品质假一赔十 |
|||
IOR |
0719+ |
TO-263-5 |
900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRGS15B60KDPBF芯片相关品牌
IRGS15B60KDPBF规格书下载地址
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IRGS15B60KDPBF数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
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DdatasheetPDF页码索引
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