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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRGS15B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for | IRF | ||
IRGS15B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:830.08 Kbytes Page:16 Pages | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:830.08 Kbytes Page:16 Pages | IRF | |||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | |||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | |||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | |||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | |||
ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien | IRF |
IRGS15B60KDPBF产品属性
- 类型
描述
- 型号
IRGS15B60KDPBF
- 功能描述
IGBT 晶体管 600V ULTRAFAST 10-30KHZ COPACK IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
422 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IOR |
0719+ |
TO-263-5 |
900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
21+ |
TO-263 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
VISHAY |
24+ |
TO-263 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
IR |
24+ |
TO-263D2PAK |
9000 |
全新原装正品,IR全线可订 |
|||
IR |
17+ |
TO263 |
6200 |
100%原装正品现货 |
|||
IR |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
|||
Infineon Technologies |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
IRGS15B60KDPBF芯片相关品牌
IRGS15B60KDPBF规格书下载地址
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IRGS15B60KDPBF数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流(Ic)(最大值) 55A 集射极击穿电压(最大值) 600V 类型 - 不同 Vge,Ic 时的 Vce(on) 2.3V @ 15V,27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中,焕盛达-专注原装 用芯服务;
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2020-1-12IRL2203NPBF 原装现货热卖!!!!
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2019-10-11IRL1004STRRPBF公司大量原装正品现货/长期供应
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DdatasheetPDF页码索引
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