型号 功能描述 生产厂家&企业 LOGO 操作
IRGS15B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for

IRF

IRGS15B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:830.08 Kbytes Page:16 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:830.08 Kbytes Page:16 Pages

IRF

600V, 15A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 15A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 15A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 15A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien

IRF

IRGS15B60KDPBF产品属性

  • 类型

    描述

  • 型号

    IRGS15B60KDPBF

  • 功能描述

    IGBT 晶体管 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-12 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
422
优势代理渠道,原装正品,可全系列订货开增值税票
IOR
0719+
TO-263-5
900
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
21+
TO-263
30000
百域芯优势 实单必成 可开13点增值税
VISHAY
24+
TO-263
12000
VISHAY专营进口原装现货假一赔十
IR
23+
TO-263
30000
全新原装现货,价格优势
IR
24+
TO-263D2PAK
9000
全新原装正品,IR全线可订
IR
17+
TO263
6200
100%原装正品现货
IR
22+
TO-263
25000
只做原装进口现货,专注配单
Infineon Technologies
22+
D2PAK
9000
原厂渠道,现货配单
IR
23+
TO-263
8000
只做原装现货

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