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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGPC40 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier |  |   |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT STD 600V 50A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT UFAST 600V 40A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | |
IRGPC40产品属性
- 类型
描述
- 型号
IRGPC40
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
TO247AC |
13880 |
公司只售原装,支持实单 |
|||
QSI |
23+24 |
QSOP-20 |
27960 |
原装现货.优势热卖.终端BOM表可配单 |
|||
IR |
2048+ |
TO-247 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
23+ |
TO-247 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IR |
2025+ |
TO-247 |
4675 |
全新原厂原装产品、公司现货销售 |
|||
IR |
23+ |
TO-247 |
35890 |
||||
IR |
21+ |
TO247 |
10000 |
原装现货假一罚十 |
|||
IR |
22+ |
TO |
6000 |
十年配单,只做原装 |
|||
IR |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
IR |
24+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
IRGPC40芯片相关品牌
IRGPC40规格书下载地址
IRGPC40参数引脚图相关
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IRGPC40数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中，焕盛达-专注原装用芯服务；
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2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF厂家：IR封装：TO-220现货热卖原厂原包装，只做原装，假一赔万!!!欢迎致电上海意淼张小姐18301798078021-61316368QQ:2719102545
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2019-5-8
DdatasheetPDF页码索引
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