型号 功能描述 生产厂家&企业 LOGO 操作
IRGPC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT STD 600V 50A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT UFAST 600V 40A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRGPC40产品属性

  • 类型

    描述

  • 型号

    IRGPC40

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

更新时间:2024-3-29 10:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
21+
TO247
10000
原装现货假一罚十
QSI
22+
QSOP-20
27960
原装现货.优势热卖.终端BOM表可配单
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
IR
2020+
TO-247
16800
绝对原装进口现货,假一赔十,价格优势!?
IR
23+
TO
10000
公司只做原装正品
IR
TO-247
6000
原装现货,长期供应,终端可账期
IR
24+
TO
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
IR
23+
TO-247
35890
IR
22+
TO
6000
十年配单,只做原装
IR
16+
TO-3P
10000
全新原装现货

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