型号 功能描述 生产厂家 企业 LOGO 操作
IRGPC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

IRGPC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated

Infineon

英飞凌

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT STD 600V 50A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT UFAST 600V 40A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRGPC40产品属性

  • 类型

    描述

  • 型号

    IRGPC40

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

更新时间:2025-10-11 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
17138
原装现货,当天可交货,原型号开票
IR
NEW
TO-247
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
IR
20+
TO-247
17
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO 247
161297
明嘉莱只做原装正品现货
IR
24+
TO-3P
4500
只做原装正品现货 欢迎来电查询15919825718
IR
2025+
TO-247
4675
全新原厂原装产品、公司现货销售
IR
96+
TO-3P
444
原装
QSI
23+24
QSOP-20
27960
原装现货.优势热卖.终端BOM表可配单
IR
23+
原厂封装
9888
专做原装正品,假一罚百!

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