INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)

Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A)

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Celeron M Processor on 65 nm Process

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Surface Mount Fuses

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Supporting the Intel Celeron processor

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Sanding

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The 440A Series AECQ-Compliant fuses are specifically tested to cater to secondary circuit protection needs of compact auto electronics applications

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