INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits •

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH 600V 76A TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：301.33 Kbytes Page：11 Pages

HIGH VOLTAGE DIODES

FEATURES • ZENER VOLTAGE 12.4V to 200V • TEMPERATURE COEFFICIENT RANGE: 0.005/°C to 0.002/°C

12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES 5

• 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005/°C AND 0.002/°C • HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE

HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES

FEATURES • ZENER VOLTAGE 12.4V to 200V • TEMPERATURE COEFFICIENT RANGE: 0.005/°C to 0.002/°C

Hex inverter

DESCRIPTION The HEF4069UB is a general purpose hex inverter. Each of the six inverters is a single stage.

Shorty Snap Rivets

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