位置:首页 > IC中文资料第440页 > IRFZ44N
IRFZ44N价格
参考价格:¥4.4421
型号:IRFZ44NLPBF 品牌:INTERNATIONAL 备注:这里有IRFZ44N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ44N批发/采购报价,IRFZ44N行情走势销售排行榜,IRFZ44N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFZ44N | N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRFZ44N | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ44N | Power MOSFET PowerMOSFET VDSS=55V,RDS(on)=17.5mohm,ID=49A NChannel | TEL TRANSYS Electronics Limited | ||
IRFZ44N | N-CHANNEL Power MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | ||
IRFZ44N | N-Channel Power MOSFET DESCRIPTION Processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlo | TGS Tiger Electronic Co.,Ltd | ||
IRFZ44N | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFZ44N | N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRFZ44N | 55A 50V N CHANNEL POWER MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication | FCI Amphenol ICC | ||
IRFZ44N | Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFZ44N | 50A,60V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220 | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | ||
IRFZ44N | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRFZ44N | 60V N-Channel MOSFET 文件:867.82 Kbytes Page:8 Pages | UMWUMW 友台友台半导体 | ||
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET-R Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization: | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
55V N-Channel MOSFET DESCRIPTION ThisadvancedPowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit, combinedwiththefastswitchingspeedandruggedized devicedesignthatHEXFETpowerMOSFETsarewell knownfor, | TGS Tiger Electronic Co.,Ltd | |||
HEXFET짰Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor 文件:338.57 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:231.93 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:231.93 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
60V N-Channel MOSFET 文件:867.82 Kbytes Page:8 Pages | UMWUMW 友台友台半导体 | |||
ADVANCED PROCESS TECHNOLOGY 文件:340.05 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:340.05 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRFZ44N产品属性
- 类型
描述
- 型号
IRFZ44N
- 制造商
International Rectifier
- 制造商
International Rectifier
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB
- 制造商
International Semiconductor Inc
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB
- 制造商
Vishay Semiconductors
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
||||
Infineon(英飞凌) |
23+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
19+ |
TO220 |
1200 |
进口原装现货 |
|||
INFINEON |
23+ |
K-B |
1040 |
只有原装,请来电咨询 |
|||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
21+ |
TO-220AB |
900000 |
原装正品现货/订货 价格优惠 |
||||
IR |
2012 |
TO-220 |
900000 |
全新原装进口自己库存优势 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR(国际整流器) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon Technologies |
23+ |
D2PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
IRFZ44N规格书下载地址
IRFZ44N参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRGBC20
- IRGB430
- IRGB420
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46NSTRLPBF
- IRFZ46NPBF
- IRFZ46NLPBF
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44ZSTRRPBF
- IRFZ44ZSPBF
- IRFZ44ZPBF
- IRFZ44ZLPBF
- IRFZ44Z
- IRFZ44VZSPBF
- IRFZ44VZPBF
- IRFZ44VPBF
- IRFZ44V
- IRFZ44STRRPBF
- IRFZ44SPBF
- IRFZ44S
- IRFZ44RPBF
- IRFZ44R
- IRFZ44PBF
- IRFZ44NSTRRPBF
- IRFZ44NSTRLPBF-CUTTAPE
- IRFZ44NSTRLPBF
- IRFZ44NSPBF
- IRFZ44NPBF
- IRFZ44NLPBF
- IRFZ44L
- IRFZ44ESTRLPBF
- IRFZ44ESPBF
- IRFZ44EPBF
- IRFZ44E
- IRFZ44
- IRFZ42
- IRFZ40PBF
- IRFZ40
- IRFZ34S
- IRFZ34PBF
- IRFZ34NSTRRPBF
- IRFZ34NSTRLPBF
- IRFZ34NSPBF
- IRFZ34NPBF
- IRFZ34N
- IRFZ34L
- IRFZ34E
- IRFZ34A
- IRFZ34
- IRFZ32
- IRFZ30PBF
- IRFZ30
- IRFZ24V
- IRFZ24SPBF/BKN
- IRFZ24SPBF
- IRFZ24S
- IRFZ24PBF
- IRFZ24NSTRLPBF-CUTTAPE
- IRFZ24NSTRLPBF
- IRFZ24NPBF
- IRFZ24N
- IRFZ24L
- IRFZ24A
- IRFZ24
- IRFZ22
IRFZ44N数据表相关新闻
IRFZ44NPBF
IRFZ44NPBF
2022-12-2IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRFU9014PBF只做原装现货
焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2021-1-3IRFY130CM IR 半导体晶体管
IRFY130CMIR半导体晶体管
2020-12-4IRFZ44NPBF选拓亿芯电子,国际电子元器件供应商
元器件优质供应
2019-11-1IRFU420PBF拓亿芯专业分销原厂品牌
二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、逻辑芯片、电源芯片、放大器、
2019-11-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80