N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode powe

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 17.5 mohm, ID = 49 A N Channel

N-CHANNEL Power MOSFET

FEATURES ◆ Ultra Low ON Resistance ◆ Low Gate Charge ◆ Dynamic dv/dt Rating ◆ Inductive Switching Curves ◆ Peak Current vs Pulse Width Curve APPLICATION ◆ Buck Converter High Side Switch ◆ DC motor control , Ups ...etc , & other Application

N-Channel Power MOSFET

DESCRIPTION Process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with lo

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

55A 50V N CHANNEL POWER MOSFET

FEATURES ◆ Ultra Low ON Resistance ◆ Low Gate Charge ◆ Dynamic dv/dt Rating ◆ Inductive Switching Curves ◆ Peak Current vs Pulse Width Curve APPLICATION ◆ Buck Converter High Side Switch ◆ DC motor control , Ups ...etc , & other Application

Advanced Process Technology

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

SEMICONDUCTORS

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60V N-Channel MOSFET

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TO-220 MOS FETs 场效应管

60V N-Channel Power MOSFET

MOS场效应

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

HEXFET-R Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in s

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

55V N-Channel MOSFET

DESCRIPTION This advanced Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

N-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

文件：231.93 Kbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：231.93 Kbytes Page：8 Pages

60V N-Channel MOSFET

文件：867.82 Kbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：340.05 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：340.05 Kbytes Page：11 Pages