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IRFZ44N价格
参考价格:¥4.4421
型号:IRFZ44NLPBF 品牌:INTERNATIONAL 备注:这里有IRFZ44N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ44N批发/采购报价,IRFZ44N行情走势销售排行榜,IRFZ44N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFZ44N | 55A 50V N CHANNEL POWER MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication | FCI Amphenol ICC | ||
IRFZ44N | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ44N | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFZ44N | Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFZ44N | N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRFZ44N | N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRFZ44N | N-CHANNEL Power MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | ||
IRFZ44N | Power MOSFET PowerMOSFET VDSS=55V,RDS(on)=17.5mohm,ID=49A NChannel | TEL TRANSYS Electronics Limited | ||
IRFZ44N | N-Channel Power MOSFET DESCRIPTION Processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlo | TGS Tiger Electronic Co.,Ltd | ||
IRFZ44N | 50A,60V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220 | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | ||
IRFZ44N | 60V N-Channel MOSFET 文件:867.82 Kbytes Page:8 Pages | UMWUMW 友台友台半导体 | ||
IRFZ44N | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET-R Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization: | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
55V N-Channel MOSFET DESCRIPTION ThisadvancedPowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit, combinedwiththefastswitchingspeedandruggedized devicedesignthatHEXFETpowerMOSFETsarewell knownfor, | TGS Tiger Electronic Co.,Ltd | |||
N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor 文件:338.57 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:231.93 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:231.93 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
60V N-Channel MOSFET 文件:867.82 Kbytes Page:8 Pages | UMWUMW 友台友台半导体 | |||
ADVANCED PROCESS TECHNOLOGY 文件:340.05 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:340.05 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRFZ44N产品属性
- 类型
描述
- 型号
IRFZ44N
- 制造商
International Rectifier
- 制造商
International Rectifier
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB
- 制造商
International Semiconductor Inc
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB
- 制造商
Vishay Semiconductors
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
60000 |
进口原装现货 |
|||
IR |
23+ |
TO-220 |
5600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
IR |
06+ |
TO-220 |
20000 |
自己公司全新库存绝对有货 |
|||
IR |
23+ |
N/A |
89111 |
原装现货!品质为先!请来电垂询! |
|||
IR |
2339+ |
TO220 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
IR |
23+ |
TO-263 |
20540 |
保证进口原装现货假一赔十 |
|||
INFINEON |
2020+ |
TO-263 |
12000 |
原厂渠道 免费送样 |
|||
IR |
TO-220 |
72000 |
绝对原装现货特价 |
||||
IR |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
|||
IR |
23+ |
TO220 |
8653 |
全新原装优势 |
IRFZ44N规格书下载地址
IRFZ44N参数引脚图相关
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IRFZ44N数据表相关新闻
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