IRFZ44N价格

参考价格:¥4.4421

型号:IRFZ44NLPBF 品牌:INTERNATIONAL 备注:这里有IRFZ44N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ44N批发/采购报价,IRFZ44N行情走势销售排行榜,IRFZ44N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFZ44N

55A 50V N CHANNEL POWER MOSFET

FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication

FCI

Amphenol ICC

FCI
IRFZ44N

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44N

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ44N

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFZ44N

N-Channel MOSFET Transistor

DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRFZ44N

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ44N

N-CHANNEL Power MOSFET

FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRFZ44N

Power MOSFET

PowerMOSFET VDSS=55V,RDS(on)=17.5mohm,ID=49A NChannel

TEL

TRANSYS Electronics Limited

TEL
IRFZ44N

N-Channel Power MOSFET

DESCRIPTION Processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlo

TGS

Tiger Electronic Co.,Ltd

TGS
IRFZ44N

50A,60V Heatsink Planar N-Channel Power MOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI
IRFZ44N

60V N-Channel MOSFET

文件:867.82 Kbytes Page:8 Pages

UMWUMW

友台友台半导体

UMW
IRFZ44N

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET-R Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

55V N-Channel MOSFET

DESCRIPTION ThisadvancedPowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit, combinedwiththefastswitchingspeedandruggedized devicedesignthatHEXFETpowerMOSFETsarewell knownfor,

TGS

Tiger Electronic Co.,Ltd

TGS

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel MOSFET Transistor

文件:338.57 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ADVANCED PROCESS TECHNOLOGY

文件:231.93 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:231.93 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

60V N-Channel MOSFET

文件:867.82 Kbytes Page:8 Pages

UMWUMW

友台友台半导体

UMW

ADVANCED PROCESS TECHNOLOGY

文件:340.05 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:340.05 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFZ44N产品属性

  • 类型

    描述

  • 型号

    IRFZ44N

  • 制造商

    International Rectifier

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET Transistor, N-Channel, TO-220AB

  • 制造商

    International Semiconductor Inc

  • 功能描述

    MOSFET Transistor, N-Channel, TO-220AB

  • 制造商

    Vishay Semiconductors

  • 功能描述

    MOSFET Transistor, N-Channel, TO-220AB

更新时间:2024-3-19 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-220
60000
进口原装现货
IR
23+
TO-220
5600
绝对全新原装!优势供货渠道!特价!请放心订购!
IR
06+
TO-220
20000
自己公司全新库存绝对有货
IR
23+
N/A
89111
原装现货!品质为先!请来电垂询!
IR
2339+
TO220
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
IR
23+
TO-263
20540
保证进口原装现货假一赔十
INFINEON
2020+
TO-263
12000
原厂渠道 免费送样
IR
TO-220
72000
绝对原装现货特价
IR
2020+
TO-220
350000
100%进口原装正品公司现货库存
IR
23+
TO220
8653
全新原装优势

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