IRFZ44ES价格

参考价格:¥3.3315

型号:IRFZ44ESPBF 品牌:IR 备注:这里有IRFZ44ES多少钱,2025年最近7天走势,今日出价,今日竞价,IRFZ44ES批发/采购报价,IRFZ44ES行情走势销售排行榜,IRFZ44ES报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ44ES

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ44ES

Advanced Process Technology

文件:174.18 Kbytes Page:11 Pages

IRF

IRFZ44ES

isc N-Channel MOSFET Transistor

文件:318.38 Kbytes Page:2 Pages

ISC

无锡固电

IRFZ44ES

采用 D²PAK 封装的 IR MOSFET 60 V

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

文件:174.18 Kbytes Page:11 Pages

IRF

N-Channel 60 V (D-S) MOSFET

文件:1.36463 Mbytes Page:9 Pages

VBSEMI

微碧半导体

ADVANCED PROCESS TECHNOLOGY

文件:239.75 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:239.75 Kbytes Page:11 Pages

IRF

IRFZ44ES产品属性

  • 类型

    描述

  • 型号

    IRFZ44ES

  • 功能描述

    MOSFET N-CH 60V 48A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-30 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
SOT263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
20+
TO-263
38560
原装优势主营型号-可开原型号增税票
IR
2025+
TO263-3
4325
全新原厂原装产品、公司现货销售
IR
22+
TO-263
12245
现货,原厂原装假一罚十!
IR
24+
NA
4500
只做原装正品现货 欢迎来电查询15919825718
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
IR
25+23+
SOT263
18972
绝对原装正品全新进口深圳现货
Infineon/英飞凌
24+
D2PAK
25000
原装正品,假一赔十!
IR
25+
50
公司优势库存 热卖中!!

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