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IRFZ44ESPBF中文资料
IRFZ44ESPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications.
• Advanced Process Technology
• Surface Mount (IRFZ44ES)
• Low-profile through-hole (IRFZ44EL)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
IRFZ44ESPBF产品属性
- 类型
描述
- 型号
IRFZ44ESPBF
- 功能描述
MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
Infineon(英飞凌) |
24+ |
D2PAK |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-263 |
45000 |
IR代理原包原盒,假一罚十。最低价 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
23+ |
D2-pak |
90000 |
一定原装正品/香港现货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
08+ |
D2-pak |
20000 |
普通 |
|||
INFINEON |
1503+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
VBSEMI/台湾微碧 |
23+ |
D2PAK |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
IRFZ44ESPBF 价格
参考价格:¥3.3315
IRFZ44ESPBF 资料下载更多...
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International Rectifier
International Rectifier Corporation(简称IRF)是一家全球领先的功率半导体制造商,成立于1947年,总部位于美国加利福尼亚州。IRF专注于开发和提供高效能的功率管理解决方案,其产品广泛应用于汽车、工业、消费电子、航空航天、通信和计算等多个领域。公司以其功率MOSFET闻名,提供多种类型的整流二极管,包括肖特基二极管和超快恢复二极管,同时还开发IGBT(绝缘栅双极晶体管)和电源管理IC。IRF在功率半导体领域的创新和技术积累为其赢得了良好的声誉,并于2014年被英飞凌科技股份公司(Infineon Technologies AG)收购,这一收购旨在增强英飞凌在