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IRFZ34NS价格
参考价格：￥2.7595
型号：IRFZ34NSPBF 品牌：INTERNATIONAL 备注：这里有IRFZ34NS多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ34NS批发/采购报价，IRFZ34NS行情走势销售排行榜，IRFZ34NS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ34NS | HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRFZ34NS | HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | |
IRFZ34NS | 丝印代码：D2PAK；isc N-Channel MOSFET Transistor • FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi | ISC 无锡固电 | | |
IRFZ34NS | N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
IRFZ34NS | ADVANCED PROCESS TECHNOLOGY 文件：1.23056 Mbytes Page：10 Pages | KERSEMI | | |
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
advanced process technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：302.59 Kbytes Page：11 Pages | IRF | |
IRFZ34NS产品属性
- 类型
描述
- 型号
IRFZ34NS
- 功能描述
MOSFET N-CH 55V 29A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
TO-263-2 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEONTECHNOLOGIESAG |
24+ |
D2PAK |
160455 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
45000 |
IR全新现货IRFZ34NS即刻询购立享优惠#长期有排单订 |
|||
INFINEON/英飞凌 |
21+ |
NA |
1820 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
IR |
24+ |
TO-263 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INTERNATIONAL RECTIFIER (IR) |
25+ |
799 |
公司优势库存 热卖中! |
||||
IR |
23+ |
TO263 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
IR |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
IRFZ34NS规格书下载地址
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DdatasheetPDF页码索引
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